基于忆阻器的SIMON轮函数电路设计
PDF下载 (977)陈鑫辉,张会红,张跃军*.基于忆阻器的SIMON轮函数电路设计[J].宁波大学学报(理工版),2018,31(6):1-6.DOI:
CHEN Xin-hui,ZHANG Hui-hong,ZHANG Yue-jun*.Design of a SIMON round function circuit based on memristor[J].Journal of Ningbo University(Natural Science & Engineering Edition),2018,31(6):1-6.DOI:
| Title: | Design of a SIMON round function circuit based on memristor |
| 作者: | 陈鑫辉, 张会红, 张跃军* |
| Author(s): | CHEN Xin-hui, ZHANG Hui-hong, ZHANG Yue-jun* |
| 关键词: | 忆阻器; SIMON轮函数; 断点记忆; 逻辑门电路 |
| Keywords: | memristor; SIMON round function; break-point memory; logic gate circuit |
| 分类号: | TP331 |
| 文献标识码: | A |
| 摘要: | 忆阻器由磁通量、电荷、电压、电流之间关系对称性推导得出, 被认为是继电阻、电容、电感之后的第四大无源元件, 具有记忆功能和非易失性等特点. 通过对忆阻器工作原理和电路模型的研究, 提出了基于忆阻器的SIMON轮函数电路设计方案. 该方案首先分析忆阻器模型结构和SIMON算法, 设计基于忆阻器的与、或、非门电路; 并在此基础上实现基于忆阻器的SIMON轮函数电路, 利用忆阻器的非易失性特性实现断点记忆功能; 最后在Cadence Virtuoso环境下, 仿真验证所设计电路的断电保存功能. 与传统CMOS电路比较, 基于忆阻器的SIMON轮函数电路减少了27.8%的元器件数量, 低功耗特性明显. |
| Abstract: | As the fourth fundamental circuit element besides resistance, capacitance and inductance, the memristor is derived using the magnetic flux, charge, voltage, electric current symmetry. It contains the memory function and non-volatile. Based on investigating the operating principle and circuit model of memristor, in this paper a scheme of the SIMON round function circuit is presented utilizing the memristor. In the scheme the structure of memristor and SIMON algorithm are first analyzed, followed by designing the circuit of AND OR NOT logic gate based on the use of memristor. The SIMON round function circuit is designed to achieve the function of break-point memory by taking advantage of the non-volatile characteristic of memristor. Under the condition of TSMC 65nm, the Cadence Virtuoso simulation result shows that the proposed circuit has the correct logic. Compared to the conventional CMOS circuit, the number of components decreases by about 27.8%, and is characterized with low-power consumption. |
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| 备注/Memo: | 收稿日期: 2018?02?01. 宁波大学学报（理工版）网址: http://journallg.nbu.edu.cn/ 基金项目: 浙江省自然科学基金（LY18F040002）; 国家自然科学基金（61871244, 61874078）; 浙江省公益项目（2016C31078）; 横向项目（HK2017000135）; 宁波大学研究生科研创新基金. 第一作者: 陈鑫辉（1995－）, 男, 浙江温州人, 在读硕士研究生, 主要研究方向: 忆阻器电路研究设计. E-mail: 465998670@qq.com *通信作者: 张跃军（1982－）, 男, 浙江宁波人, 博士/副教授, 主要研究方向: 集成电路抗老化设计等. E-mail: zhangyuejun@nbu.edu.cn 宁波大学学报（理工版）网址：http://journallg.nbu.edu.cn/ |
