C掺杂型NiCr合金薄膜的电性能和微观结构
PDF下载 (514)赖莉飞 1,孙 蓉 2.C掺杂型NiCr合金薄膜的电性能和微观结构[J].宁波大学学报(理工版),2014,27(02):73-77.DOI:
LAI Li-fei 1,SUN Rong 2.Electrical Properties and Microstructures of Carbon-doped Nickel-Chromium Alloy Thin Films[J].Journal of Ningbo University(Natural Science & Engineering Edition),2014,27(02):73-77.DOI:
| Title: | Electrical Properties and Microstructures of Carbon-doped Nickel-Chromium Alloy Thin Films |
| 作者: | 赖莉飞 1, 孙 蓉 2 |
| Author(s): | LAI Li-fei 1, SUN Rong 2 |
| 关键词: | C掺杂型Ni Cr合金薄膜; 埋入式薄膜电阻; 电性能; 微观结构 |
| Keywords: | C-doped NiCr alloy thin film; embedded thin film resistor; electrical properties; microstructures |
| 分类号: | O631.3 |
| 文献标识码: | A |
| 摘要: | 利用闭合磁场非平衡磁控溅射工艺制备出C掺杂型NiCr合金薄膜电阻材料, 获得了电性能优于NiCr合金薄膜的NiCrC薄膜电阻材料. 实验结果表明: NiCr薄膜中掺杂C元素后, 薄膜的择优取向由Ni(011)变为Ni(111); 薄膜的缺陷和应力得以减小; 薄膜中C元素具有类石墨性质. |
| Abstract: | The electrical properties of C -doped NiCr alloy thin film used as resistor materials, which is obtained by unbalanced magnetron sputtering process in the closed magnetic field, are found to be better than that of NiCr alloy thin films. The results from the experiment conducted in this research show that the preferred orientations of NiCrC thin film is Ni(011), while that of NiCr thin film is Ni(111); Also found is that the defects and stresses in NiCrC are reduced, and the carbon in NiCrC thin film possesses the graphite-like structure. |
| 参考文献 /References: | [1].Wang J, Hilburn R, Clouser S. Manufacturing embedded resistors[C]. IPC EXPO 2002 Proceedings of the Technical Conference, Louisiana, 2002:3-4. [2].Min G. Embedded passive resistors challenges and opportunities for conducting polymers[J]. Synthetic Metals, 2005, 153(1/3):49-52. [3].Lee H F, Chan C Y, Tang C S. Embedding capacitors and resistors into printed circuit boards using a sequential lamination technique[J]. J Mater Process Technol, 2008, 207(1/3):72-88. [4].Kazi I H, Wild P M, Moore T N, et al. The electro- mechanical behavior of nichrome (80/20 wt.%) film[J]. Thin Solid Films, 2003, 433(1/2):337-343. [5].Gladun C, Heinrich A, Lange F, et al. Electrical transport properties of high resistance Cr-Si-O thin films[J]. Thin Solid Films, 1985, 125(1/2):101-106. [6].Lai L F, Zeng W J, Fu X Z, et al. Annealing effect on the electrical properties and microstructure of embedded Ni-Cr thin film resistor[J]. Journal of Alloys Compd, 2012, 538:125-130. [7].R?lke J. Nichrome thin film technology and its application[J]. Electrocomponent Science and Technology, 1981, 9:51-57. [8].夏爱林, 韩宝善. 直流磁控溅射Si和玻璃衬底Fe/Co多层膜磁性能比较[J]. 物理学报, 2008, 57(1):545-549 [9].Tsai M H, Sun S C, Tsai C E, et al. Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and Si[J]. J Appl Phys, 1996, 79(9):6932-6938. [10].丁万春, 施忠. 埋入式电阻工艺的开发[J]. 印制电路信息, 2002(7):36-44 [11].Sondheimer E H. The mean free path of electrons in metals[J]. Advances in Physics, 1952(1):1-42. [12].Howson M A. Incipient localisation and electron-electron correlation effects in metallic glass alloys[J]. Journal of Physics F: Metal Physics, 1984, 14:25-31. [13].Erat S, Metina H, Ar M. Influence of the annealing in nitrogen atmosphere on the XRD, EDX, SEM and electrical properties of chemical bath deposited CdSe thin films[J]. Materials Chemistry and Physics, 2008, 111: 114-120. |
| 备注/Memo: | 收稿日期: 2014-01-04. 宁波大学学报（理工版）网址 http://journallg.nbu.edu.cn/ 基金项目: 浙江省教育厅科研项目（Y201326895）. 第一作者: 赖莉飞（1972－）, 女, 四川绵阳人, 讲师, 主要研究方向: 功能薄膜材料. E-mail: lailf-325@163.com 宁波大学学报（理工版）网址：http://journallg.nbu.edu.cn/ |
