光对ZnO薄膜电致电阻转变效应的调控研究
PDF下载 (385)孟建光1,2,尚 杰2,薛武红2,刘宜伟2,王 军1*,陈 斌2*.光对ZnO薄膜电致电阻转变效应的调控研究[J].宁波大学学报(理工版),2014,27(03):83-87.DOI:
MENG Jian-guang1,2,SHANG Jie2,XUE Wu-hong2,LIU Yi-wei2,WANG Jun1*,CHEN Bin2*.Effect of Illumination on Electric Field Induced Resistive Switching of ZnO film: Study[J].Journal of Ningbo University(Natural Science & Engineering Edition),2014,27(03):83-87.DOI:
| Title: | Effect of Illumination on Electric Field Induced Resistive Switching of ZnO film: Study |
| 作者: | 孟建光1, 2, 尚 杰2, 薛武红2, 刘宜伟2, 王 军1*, 陈 斌2* |
| Author(s): | MENG Jian-guang1, 2, SHANG Jie2, XUE Wu-hong2, LIU Yi-wei2, WANG Jun1*, CHEN Bin2* |
| 关键词: | ZnO薄膜; 光伏; 电致电阻转变; 多态存储; 电输运 |
| Keywords: | ZnO film; photovoltaic effect; electric field induced resistive switching; multi-resistance state storage; electrical transport |
| 分类号: | O483 |
| 文献标识码: | A |
| 摘要: | 利用磁控溅射技术在镀铂硅片上制备ZnO薄膜, X射线衍射测试表明ZnO薄膜为纯相结构, 原子力显微镜测试显示ZnO薄膜表面平整均匀, 均方根粗糙度为1.87nm. 在室温下对Au/ZnO/Pt三明治结构的电输运行为进行了研究, 结果表明同时存在电致电阻转变效应和光伏效应, 并且光照可调控电致电阻. 当光强为360?W·cm-2时, 电阻调控幅度达78%, 这种光调控的电致电阻转变有助于实现多态存储, 提高存储密度. |
| Abstract: | ZnO film is prepared on Pt/Ti/SiO2/Si substrate by magnetron sputtering. The X-ray diffraction and atomic force microscope are employed to characterize its structure and surface morphology, respectively. The result shows that the ZnO film has a pure phase and a smooth surface with a root-mean-square roughness of 1.87 nm. At room temperature, the electrical transport property of the Au/ZnO/Pt structure is investigated. It further shows that the photovoltaic effect and the electric field induce the resistive switching effect co-existing in the sample. Furthermore, the electric field induced resistance can be tuned by varying illumination, and the resistive adjustability can reach as high as 78% when the illumination with 360 ?W·cm-2 is applied. The photo-tuned resistive switching contributes to both the favored multi-resistance state storage and the storage density. |
| 参考文献 /References: | [1].based resistive switching memories-nanoionic mechanisms, prospect, and challenges[J]. Advanced Meterials, 2009, 21:2632-2663. [2].Hosoi Y, Tamai Y, Ohnishi T, et al. High speed unipolar switching resistance RAM (RRAM) technology[J]. Electron Devices Meeting, 2006, 31:547-550. [3].Szot K, Speier W, Bihlmayer G, et al. Switching the electrical resistance of individual dislocations in single- crystalline SrTiO3[J]. Nature Materials, 2006(5):312-320. [4].Liu Qi, Dou Chunmeng, Wang Yan, et al. Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device[J]. Applied Physics Letters, 2009, 95:23501-23509. [5].Yang J J, Pickett M D, Stewart D R. Memristive switching mechanism for metal/oxide/metal nanodevices [J]. Nature Nanotechnology, 2008(3):429-433. [6].Mariana U, Raul Z, Federico G, et al. A light-controlled resistive switching memory[J]. Advanced Materials, 2012, 24:2496-2500. [7].Peng Shanshan, Zhuge Fei, Chen Xinxin, et al. Mecha- nism for resistive switching in an oxide-based electro- chemical metallization memory[J]. Applied Physics Letters, 2012, 100:72101-72108. [8].Hickmott T W. Low-frequency negative resistance in thin anodic oxide films[J]. Journal of Applied Physics, 1962, 33:2669-2682. [9].Argall F. Switching phenomena in titanium oxide thin films[J]. Solid-state Electronics, 1968, 11:535-541. [10].Park J, Lee S, Yong K. Photo-stimulated resistive switching of ZnO nanorods[J]. Nanotechnology, 2012, 23: 385707-385715. [11].Bueno P R, Varela J A, Barrado C M, et al. A comparative study of thermal conductivity in ZnO- and SnO2-based varistor systems[J]. Journal of American Ceramic Society, 2005, 88(9):2629-2631. [12].Wang Junpeng, Wang Zeyan, Huang Baibiao, et al. Oxygen vacancy induced band-gap narrowing and enhanced visible light photocatalytic activity of ZnO[J]. Applied Materials and Interfaces, 2012(4):4024-4030. [13].陈宜生. 物理效应及其应用[M]. 天津: 天津大学出版社, 1996:18-23; 244. [14].Katiyar R K, Kumar A, Morell G, et al. Photovoltaic effect in a wide-area semiconductor-ferroelectric device [J]. Applied Physics Letters, 2011, 99:92906-92913. [15].Choi T, Lee S, Choi Y J, et al. Switching ferroelectric diode and photovoltaic effect in BiFeO3[J]. Science, 2009, 324:63-72. [16].赵省贵, 陈长乐, 金克新. La2/3Sr1/3MnO3薄膜的外场诱导电阻变化特性[J]. 稀有金属材料与工程, 2008(1):37- 42. [17].罗炳成, 陈长乐, 谢廉. Fe3O4薄膜的电输运及光诱导特性研究[J]. 物理学报, 2011, 60(2):27306-27312. |
| 备注/Memo: | 收稿日期: 2013?05?06. 宁波大学学报(理工版)网址: http://journallg.nbu.edu.cn/ 基金项目: 浙江省自然科学基金(Y4090498). 第一作者: 孟建光(1985-), 男, 山东潍坊人, 在读硕士研究生, 主要研究方向: 多铁材料的电感调控. E-mail: mengjg@nimte.ac.cn *通信作者: 王军(1969-), 男, 江西丰城人, 博士/教授, 主要研究方向: 材料科学. E-mail: wangjun2@nbu.edu.cn 陈斌(1975-), 男, 江苏泗阳人, 研究员, 主要研究方向: 多铁材料的物性调控研究. E-mail: chenbin@nimte.ac.cn 宁波大学学报(理工版)网址:http://journallg.nbu.edu.cn/ |