基于TCM电路的抗温度漂移老化传感器设计
PDF下载 (604)丁代鲁,张跃军 *,李 刚.基于TCM电路的抗温度漂移老化传感器设计[J].宁波大学学报(理工版),2017,30(5):42-47.DOI:
DING Dai-lu,ZHANG Yue-jun *,LI Gang.Design of a TCM-based aging sensor with temperature drift insensitivity[J].Journal of Ningbo University(Natural Science & Engineering Edition),2017,30(5):42-47.DOI:
| Title: | Design of a TCM-based aging sensor with temperature drift insensitivity |
| 作者: | 丁代鲁, 张跃军 *, 李 刚 |
| Author(s): | DING Dai-lu, ZHANG Yue-jun *, LI Gang |
| 关键词: | 抗温度漂移; 老化传感器; 温度补偿; CMOS电路 |
| Keywords: | temperature drift insensitivity; aging sensor; temperature compensation; CMOS circuit |
| 分类号: | TP331 |
| 文献标识码: | A |
| 摘要: | 结合电路老化检测原理与温度补偿方法(Temperature Compensation Method, TCM), 提出了一种具有抗温度漂移特性的老化传感器电路方案. 该方案首先根据晶体管的温度补偿, 设计温度不敏感的TCM延迟单元; 然后结合被测组合电路的老化冗余时间, 利用TCM延迟单元级联方式实现参考老化延迟电路; 最后将老化延迟检测电路的输出和参考延迟电路的输出进行时序比较, 判断电路是否处于老化状态. 在SIMC 65nm CMOS工艺下仿真验证, 结果表明所设计的老化传感器功能正常, 在-40~120℃之间稳定性达到98％. |
| Abstract: | The impact of aging on circuit worsens its performance, therefore design of aging sensor has become a key technology in integrated circuit reliabilit. In this paper, a temperature drift insensitivity aging sensor circuit is proposed based on the principle of detection circuit aging and temperature compensation method (TCM). Firstly, the TCM-based temperature drift insensitivity delay unit is designed according to the temperature compensating transistor. Then, using the redundancy time of the aging measured for the circuit, the TCM-based delay unit using cascade way is designed to achieve a reference delay circuit. Finally, the output of the aging delay detection circuit and the output of the reference delay circuit are compared to determine whether the circuit is in an aging state. Tested using SIMC 65 nm CMOS process, the simulation results have validated the function of aging sensor, showing that for the temperature change in the range of -40°C and 120°C, the stability reaches as high as 98％ in percentile. |
| 参考文献 /References: | [1] NEIL H E, DAVID M H. Integrated Circuit Design[M]. 4th ed. Beijing: Publishing House of Electronics Industry, 2011:1-751. [2] KEANE J P. On-chip Circuits for Characterizing Transistor Aging Mechanisms in Advanced CMOS Technologies[D]. Twin Cities: University of Minnesota, 2010. [3] ZHANG Y, JIANG Z, WANG P, et al. High accuracy digital aging monitor based on PLL-VCO circuit[J]. Journal of Semiconductors, 2015, 36(1):158-162. [4] LI J, SEOK M. Robust and in-situ self-testing technique for monitoring device aging effects in pipeline circuits[EB/OL]. [2017-01-10]. http://ieeexplore.ieee.org/ stamp/stamp.jsp?arnumber=6881529. [5] 姚剑婷, 刘画池, 贾徭, 等. 基于NBTI效应的数字型高精度老化监测电路设计[J]. 科技通报, 2017, 33(2): 104-108. [6] KIM T H, PERSAUD R, KIM C H. Silicon odometer: An on-chip reliability monitor for measuring frequency degradation of digital circuits[J]. IEEE Journal of Solid-state Circuits, 2008, 43(4):874-880. [7] AGARWAL M, BALAKRISHNAN V, BHUYAN A. Optimized circuit failure prediction for aging: Practicality and promise[EB/OL]. [2017-01-10]. http://ieeexplore.ieee. org/stamp/stamp.jsp?arnumber=4700619. [8] ZHANG X, XIAO K, TEHRANIPOOR M. Path-delay fingerprinting for identification of recovered ICs[EB/OL]. [2017-01-10]. http://ieeexplore.ieee.org/stamp/stamp.jsp? arnumber=6378192. |
| 备注/Memo: | 收稿日期: 2017－02－15. 宁波大学学报（理工版）网址: http://journallg.nbu.edu.cn/ 基金项目: 国家自然科学基金（61404076, 61474068）; 国家星火计划（2015GA701053）; 浙江省公益项目（2015C31010, 2016C31078）; 宁波市自然科学基金（2014A610148, 2015A610107）. ?第一作者: 丁代鲁（1991－）, 男, 山东聊城人, 在读硕士研究生, 主要研究方向: 集成电路老化预测与检测. E-mail: 1019628220@qq.com ?*通信作者: 张跃军（1982－）, 男, 浙江宁波人, 博士/副教授, 主要研究方向: 集成电路抗老化设计等. E-mail: zhangyuejun@nbu.edu.cn 宁波大学学报（理工版）网址：http://journallg.nbu.edu.cn/ |
