AlAsSb的外延再生长对InAs/GaSb红外探测器暗电流抑制效果研究
PDF下载 (188)严定钰,沈 祥,王庶民,石张勇,张焱超,张 凡.AlAsSb的外延再生长对InAs/GaSb红外探测器暗电流抑制效果研究[J].宁波大学学报(理工版),2023,36(3):87-93.DOI:
YAN Dingyu,SHEN Xiang,WANG Shumin,SHI Zhangyong,ZHANG Yanchao,ZHANG Fan.Surface passivation of InAs/GaSb infrared detectors using epitaxial regrowth of AlAsSb[J].Journal of Ningbo University(Natural Science & Engineering Edition),2023,36(3):87-93.DOI:
| Title: | Surface passivation of InAs/GaSb infrared detectors using epitaxial regrowth of AlAsSb |
| 作者: | 严定钰, 沈 祥, 王庶民, 石张勇, 张焱超, 张 凡 |
| Author(s): | YAN Dingyu, SHEN Xiang, WANG Shumin, SHI Zhangyong, ZHANG Yanchao, ZHANG Fan |
| 关键词: | 外延再生长; 表面钝化; InAs/GaSb II类超晶格; 长波红外探测器; 湿法刻蚀 |
| Keywords: | epitaxial regrowth passivation; surface passivation; InAs/GaSb type-II superlattice; long wavelength infrared detector; wet etching |
| 分类号: | TN215 |
| 文献标识码: | A |
| 摘要: | 采用分子束外延(MBE)技术外延再生长AlAsSb, 对InAs/GaSb II类超晶格(T2SLs)长波红外探测器的表面缺陷进行钝化, 实现了暗电流的显著降低. 首先, 研究了湿法腐蚀浅台面的最佳腐蚀液配比, 获得了低横向腐蚀、光滑的侧壁以及均匀的腐蚀界面. 随后, 使用AlAsSb/AlAs/ GaAs、AlAsSb/GaSb两种不同的外延再生长组合和单一的SiO2薄层分别对刻蚀后的台面进行钝化, 同时保留一个没有钝化的样品作为对照, 最后对4种不同钝化条件下探测器的暗电流特性进行了测量. 结果发现, 使用AlAsSb/GaSb外延再生长钝化层的器件暗电流得到了进一步降低, 使用SiO2钝化层的效果次之, 而使用AlAsSb/AlAs/GaAs外延再生长钝化层的性能相对较差. 上述结果表明, 外延再生长钝化技术是降低长波红外探测器暗电流的一种有效方法. |
| Abstract: | Passivation of InAs/GaSb type-II superlattice (T2SLs) infrared detectors by epitaxial regrowth of AlAsSb using molecular beam epitaxy (MBE) technology has achieved a significant reduction of dark current. Firstly, the optimal etching recipe for wet etching shallow mesa surfaces is investigated to obtain low lateral corrosion, smooth etching mesa sidewall, and a uniform corrosion interface. Thereafter, the post-etched mesa is passivated using two different epitaxial regrowth combinations of AlAsSb/AlAs/GaAs and AlAsSb/GaSb and a single SiO2 thin layer, respectively. A control sample without any passivation layer is also kept for comparison, and the dark current characteristics of the four different passivations are investigated. It turns out that the passivation layer prepared with the epitaxial regrowth of AlAsSb/GaSb further reduces the dark current of the device, whereas the SiO2 passivation shows relatively less satisfying performance, and the epitaxial regrowth passivation of AlAsSb/AlAs/GaAs is the least effective. Therefore, epitaxial regrowth passivation technology proves to be an effective method to reduce the dark current of long wavelength infrared detectors. |
| 参考文献 /References: | [1] 杨斌. 二类超晶格红外光电材料研究与应用[J]. 中国基础科学, 2019, 21(1): 52-54; 64. [2] Rogalski A. HgCdTe infrared detector material: History, status and outlook[J]. Reports on Progress in Physics, 2005, 68(10):2267-2336. [3] 邢伟荣, 刘铭, 温涛, 等. Ⅱ类超晶格长波红外探测器研究进展[J]. 红外, 2021, 42(3):1-5; 10. [4] Deng G R, Yang W Y, Zhao P, et al. High operating temperature InAsSb-based mid-infrared focal plane array with a band-aligned compound barrier[J]. Applied Physics Letters, 2020, 116(3):031104. [5] Gautam N, Myers S, Barve A V, et al. High operating temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice[J]. Applied Physics Letters, 2012, 101(2):021106. [6] Gunapala S D, David T, Rafol S, et al. High operating temperature T2SL digital focal plane arrays for earth remote sensing instruments[J]. Infrared Technology and Applications XLVII, 2021, 11741:130-137. [7] Youngdale E R, Meyer J R, Hoffman C A, et al. Auger lifetime enhancement in InAs-Ga1-xInxSb superlattices[J]. Applied physics letters, 1994, 64(23):3160-3162. [8] Rogalski A. Competitive technologies of third generation infrared photon detectors[J]. Opto-Electronics Review, 2006, 14(1):84-98. [9] Rogalski A, Martyniuk P, Kopytko M. InAs/GaSb type-II superlattice infrared detectors: Future prospect[J]. Applied Physics Reviews, 2017, 4(3):031304. [10] Rogalski A, Martyniuk P, Kopytko M. Type-II superlattice photodetectors versus HgCdTe photodiodes [J]. Progress in Quantum Electronics, 2019, 68:1115114. [11] Cui S N, Jiang D W, Sun J, et al. Investigation of active-region doping on InAs/GaSb long wave infrared detectors[J]. Chinese Physics B, 2020, 29(4):048502. [12] Hood A, Razeghi M, Aifer E H, et al. On the performance and surface passivation of type-II InAs/GaSb superlattice photodiodes for the very-long-wavelength infrared[J]. Applied Physics Letters, 2005, 87(15):151113. [13] Jiang D W, Xiang W, Guo F Y, et al. Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 μm[J]. Applied Physics Letters, 2016, 108(12):121110. [14] Nguyen B-M, Chen G, Hoang M-A, et al. Growth and characterization of long-wavelength infrared type-II superlattice photodiodes on a 3-in GaSb wafer[J]. IEEE Journal of Quantum Electronics, 2011, 47(5):686-690. [15] Sullivan G J, Ikhlassi A, Bergman J, et al. Molecular beam epitaxy growth of high quantum efficiency InAs/GaSb superlattice detectors[J]. Journal of Vacuum Science & Technology, B Microelectronics and Nanometer Structures: Processing, Measurement, and Phenomena, 2005, 23(3):1144-1148. [16] 李俊斌, 李东升, 吴圣娟, 等. 二类超晶格红外焦平面探测器的研究进展[J]. 红外技术, 2021, 43(11):1034- 1043. [17] Chen G, Huang E K, Hoang A M, et al. Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors[J]. Applied Physics Letters, 2012, 101(21):213501. [18] Chen G, Nguyen B M, Hoang A M, et al. Elimination of surface leakage in gate controlled type-II InAs/GaSb mid-infrared photodetectors[J]. Applied Physics Letters, 2011, 99(18):183503. [19] Plis E A, Kutty M N, Krishna S. Passivation techniques for InAs/GaSb strained layer superlattice detectors[J]. Laser & Photonics Reviews, 2013, 7(1):45-59. [20] Hood A D. Surface passivation and performance characteristics of type-II indium arsenide/Gallium antimonide superlattice infrared photodetectors for focal plane arrays[D]. Evanston, IL, USA: Northwestern University, 2007. [21] Rehm R, Walther M, Fuchs F, et al. Passivation of InAs/(GaIn)Sb short-period superiattice photodiodes with 10 μm cutoff wavelength by epitaxial overgrowth with AlxGa1-xAsySb1-y[J]. Applied Physics Letters, 2005, 86 (17):173501. [22] Braga O M, Delfino C A, Kawabata R M S, et al. Surface passivation of InGaAs/InP p-i-n photodiodes using epitaxial regrowth of InP[J]. IEEE Sensors Journal, 2020, 20(16):9234-9244. [23] Dier O, Lin C, Grau M, et al. Selective and non-selective wet-chemical etchants for GaSb-based materials[J]. Semiconductor Science and Technology, 2004, 19(11): 1250-1253. |
| 备注/Memo: | 收稿日期:2023-02-04.宁波大学学报（理工版）网址:http://journallg.nbu.edu.cn/ 基金项目:国家自然科学基金联合项目（U21A2056）;浙江省重点研发计划（2021C01025）;宁波市科技创新2025重大专项（2020Z009）. 第一作者:严定钰（1998－）,男,湖南常德人,在读硕士研究生,主要研究方向:红外探测器二次外延钝化.E-mail:a595925304@foxmail.com *通信作者:沈祥（1980－）,男,浙江宁波人,研究员,主要研究方向:光电材料与器件.E-mail:shenxiang@nbu.edu.cn 宁波大学学报（理工版）网址：http://journallg.nbu.edu.cn/ |
