Er掺杂Sb2Te3硫系相变材料的性能研究
PDF下载 (201)陈琪琪,陈益敏,沈 祥,徐铁峰.Er掺杂Sb2Te3硫系相变材料的性能研究[J].宁波大学学报(理工版),2025,38(1):114-120.DOI:10.20098/j.cnki.1001-5132.2024.0421
CHEN Qiqi,CHEN Yimin,SHEN Xiang,XU Tiefeng.Study on the properties of Er-doped Sb2Te3 chalcogenide phase-change material[J].Journal of Ningbo University(Natural Science & Engineering Edition),2025,38(1):114-120.DOI:10.20098/j.cnki.1001-5132.2024.0421
| Title: | Study on the properties of Er-doped Sb2Te3 chalcogenide phase-change material |
| 作者: | 陈琪琪, 陈益敏, 沈 祥, 徐铁峰 |
| Author(s): | CHEN Qiqi, CHEN Yimin, SHEN Xiang, XU Tiefeng |
| 关键词: | 磁控溅射; 硫系相变薄膜; Er掺杂 |
| Keywords: | Sb2Te3; magnetron sputtering; chalcogenide phase-change film; Er doping |
| 分类号: | TN213 |
| DOI: | 10.20098/j.cnki.1001-5132.2024.0421 |
| 文献标识码: | A |
| 摘要: | 采用磁控溅射法制备不同含量Er掺杂Sb2Te3硫系相变存储薄膜, 并利用原子力显微镜、X射线衍射仪、X射线光电子能谱仪、分光光度计、红外椭圆偏振仪等对其形貌、结构、电学性能、光学性能等进行表征分析. 结果表明: Er掺杂可以有效抑制Sb2Te3结晶生长、减小晶粒尺寸, 从而显著增加结晶温度、降低电阻漂移系数(从0.01590降至0.00241), 提升该相变存储薄膜整体的非晶态热稳定性. 此外, 随着Er掺杂含量的增加, Sb2Te3薄膜的短波截止吸收边出现蓝移, 其光学带隙从1.40eV分别提升至1.76eV和1.94eV, 同时其红外波段的折射率明显降低. X射线衍射数据证实: Er掺杂会细化晶粒, 引起Sb2Te3结晶相发生晶格畸变; X射线光电子能谱分析发 现: 相变性能提升的内在原因是高含量Er掺杂引起高结合能的Er－Te成键, 表明Er掺杂有助于提高Sb2Te3相变材料在光电存储器件中的数据存储可靠性. 这可为相变存储器用于大规模神经形态计算的下一代存算一体技术提供材料支撑. |
| Abstract: | By using magnetron sputtering, we deposited pure and Er doped Sb2Te3 chalcogenide phase-change films. The morphologies, structures, electrical and optical properties were examined by the techniques such as atomic force microscopy, X-ray diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), spectrophotometry, and infrared ellipsometry. It was found that, Er doping significantly reduces the crystalline grain size of Sb2Te3 films, which is accompanied by the increases of crystallization temperature and decreases of resistance drift coefficient (0.015 90 to 0.002 41). It implies Er doping can enhance the overall amorphous thermal stability of Sb2Te3 films. Moreover, an increase of Er doping content correlates with a blue shift of short-wave cutoff absorption edge, which results in the elevation of optical band gap from 1.40 eV to 1.76 eV and subsequently to 1.94 eV, and leads to the apparent reduction of refractive index in the infrared spectrum simultaneously. The XRD results support the fact that Er doping can decrease the crystalline grain size and induce the lattice distortion in Sb2Te3 crystalline phase. The XPS results demonstrate that the formation of high-binding-energy Er－Te bonds can be found in high Er doped Sb2Te3 film but is not detected in low doped film, which is the essence of the thermal stability enhancement for Er doped Sb2Te3 film. The above results show the Er doping can improve the data storage reliability of Sb2Te3 when used as the phase-change material for photoelectric storage devices, and provide an effective support for the phase-change memory use in large-scale neuromorphic computing |
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| 备注/Memo: | 收稿日期: 2024−04−15. 宁波大学学报（理工版）网址: http://journallg.nbu.edu.cn/ 基金项目: 国家自然科学基金（U21A2056, 62374096, 62075110）; 浙江省自然科学基金重点项目（LDT23F05012F0505）; 浙江省重点研发项目（2021C01025）. 第一作者: 陈琪琪, 硕士研究生, 主要研究方向: 硫系相变薄膜制备及性能. E-mail: chenqiqiwz@163.com *通信作者: 陈益敏, 讲师, 主要研究方向: 硫系材料及其光电器件. E-mail: chenyimin@nbu.edu.cn 宁波大学学报（理工版）网址：http://journallg.nbu.edu.cn/ |
